 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Rev. 1.0 BSP324 SIPMOS (R) Power-Transistor Feature * N-Channel * Enhancement mode * Logic Level * dv/dt rated Product Summary VDS RDS(on) ID 400 25 0.17 SOT-223 V A Type BSP324 Package SOT-223 Ordering Code Q67000-S215 Tape and Reel Information E6327: 1000 pcs/reel Marking BSP324 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current TA=25C TA=70C Value 0.17 0.14 0.68 6 20 Class 1 1.8 -55... +150 55/150/56 Unit A ID Pulsed drain current TA=25C ID puls dv/dt VGS Ptot T j , Tstg Reverse diode dv/dt IS=0.17A, VDS=320V, di/dt=200A/s, Tjmax=175C kV/s V W C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-02-21 Rev. 1.0 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) BSP324 Symbol min. RthJS RthJA - Values typ. 16 max. 25 Unit K/W 85 45 115 70 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0, I D=250A Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 400 1.3 Values typ. 1.9 max. 2.3 Unit V Gate threshold voltage, VGS = V DS ID=94A Zero gate voltage drain current V DS=400V, V GS=0, T j=25C V DS=400V, V GS=0, T j=125C A 0.01 10 14.3 13.6 0.1 10 100 22 25 nA Gate-source leakage current V GS=20V, VDS=0 Drain-source on-state resistance V GS=4.5V, I D=0.05A Drain-source on-state resistance V GS=10V, I D=0.17A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (single layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-02-21 Rev. 1.0 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr V GS=0, I F=0.17A V R=200V, IF=l S, di F/dt=100A/s BSP324 Symbol Conditions min. Values typ. 0.19 103 9.2 3.8 4.6 4.4 17 68 max. 154 13.6 5.7 6.9 6.6 25 102 Unit g fs Ciss Coss Crss td(on) tr td(off) tf V DS2*I D*RDS(on)max, ID=0.14A V GS=0, V DS=25V, f=1MHz 0.09 - S pF V DD=225V, V GS=10V, ID=0.17A, RG=6 ns Qgs Qgd Qg VDD =320V, ID =0.17A - 0.35 2.17 4.54 3.6 0.45 2.82 5.9 - nC VDD =320V, ID =0.17A, VGS =0 to 10V V(plateau) VDD =320V, ID =0.17A V IS TA=25C - 0.8 85 104 0.17 0.68 1.2 127 156 A V ns nC Page 3 2003-02-21 Rev. 1.0 1 Power dissipation Ptot = f (TA) 1.9 BSP324 BSP324 2 Drain current ID = f (T A) parameter: VGS 10 V BSP324 0.18 W A 1.6 0.14 1.4 P tot ID 0.1 0.08 0.06 0.04 0.02 0 160 0 20 40 60 80 100 120 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 0.12 C C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 C 10 1 BSP324 4 Transient thermal impedance ZthJA = f (tp) parameter : D = t p/T 10 2 BSP324 A K/W 10 0 t = 170.0s p 10 1 ID / ID = V DS 1 ms 10 -1 Z thJA 10 10 ms 0 n) S(o RD D = 0.50 0.20 0.10 10 -2 10 DC -1 single pulse 0.05 0.02 0.01 10 -3 10 0 10 1 10 2 V 10 3 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 s 10 4 VDS Page 4 tp 2003-02-21 Rev. 1.0 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 C, V GS 0.6 BSP324 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 C, V GS 22 18 R DS(on) 10V 7V 6V 5V 4.5V 4.3V 4.1V 3.9V 3.7V 16 14 12 0.4 0.3 3.7V 10 3.9V 4.1V 8 4.3V 0.2 4.5V 6 5V 6V 4 7V 0.1 10V 2 0 0 1 2 3 4 5 6 7 8 10 0 0 0.05 0.1 0.15 0.2 0.25 A ID 0.35 7 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: Tj = 25 C 0.35 8 Typ. forward transconductance g fs = f(I D) parameter: Tj = 25 C 0.36 A S 0.28 0.25 0.2 gfs 0.15 0.1 0.05 0 0 1 2 3 0.24 0.2 0.16 0.12 0.08 0.04 0 ID V VGS 5 0 0.05 0.1 0.15 0.2 0.25 A ID 0.35 Page 5 2003-02-21 Rev. 1.0 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 0.17 A, VGS = 10 V 130 BSP324 BSP324 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS; ID =94A 2.6 V 98% 110 2.2 100 R DS(on) - VGS(th) 90 80 70 2 1.8 1.6 typ. 60 50 40 30 20 10 0 -60 -20 20 typ 0.8 0.6 -60 98% 1 1.4 2% 1.2 60 100 C 180 -20 20 60 100 C 160 Tj Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0, f=1 MHz, Tj = 25 C 10 3 12 Forward character. of reverse diode IF = f (V SD) parameter: Tj 10 0 BSP324 pF A Ciss 10 C 2 10 -1 Coss 10 1 IF 10 Crss -2 T j = 25 C typ T j = 150 C typ T j = 25 C (98%) T j = 150 C (98%) 10 0 10 5 10 15 20 V -3 0 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 V DS VSD Page 6 2003-02-21 Rev. 1.0 13 Typ. gate charge VGS = f (QG); parameter: VDS , ID = 0.17 A pulsed, Tj = 25 C 16 V BSP324 BSP324 14 Drain-source breakdown voltage V(BR)DSS = f (Tj) 490 BSP324 V 470 V (BR)DSS 0.2 VDS max 0.8 VDS max nC 12 460 450 440 430 420 410 400 V GS 10 8 0.5 VDS max 6 4 390 380 370 2 0 0 1 2 3 4 5 7 360 -60 -20 20 60 100 C 180 QG Tj Page 7 2003-02-21 Rev. 1.0 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSP324 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2003-02-21 |
Price & Availability of BSP324
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |